Semiconductor Device

ABSTRACT

A semiconductor device and method that comprise a first dielectric layer over a encapsulant that encapsulates a via and a semiconductor die is provided. A redistribution layer is over the first dielectric layer, and a second dielectric layer is over the redistribution layer, and the second dielectric layer comprises a low-temperature polyimide material.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation of U.S. patent application Ser. No.17/120,458, filed on Dec. 14, 2020, entitled “Semiconductor Device,”which is a continuation of U.S. patent application Ser. No. 16/051,303,filed on Jul. 31, 2018, entitled “Semiconductor Device,” now U.S. Pat.No. 10,867,811, issued on Dec. 15 2020, which is a divisional of U.S.patent application Ser. No. 15/170,487, filed on Jun. 1, 2016, entitled“Semiconductor Device and Method,” now U.S. Pat. No. 10,304,700. issuedon May 28, 2019, which application claims priority to and the benefit ofU.S. Provisional Application No. 62/243,894, filed on Oct. 20, 2015,entitled “Integrated Fan Out Structure and Method,” which applicationsare hereby incorporated herein by reference in their entirety.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of a variety ofelectronic components (e.g., transistors, diodes, resistors, capacitors,etc.). For the most part, this improvement in integration density hascome from repeated reductions in minimum feature size (e.g., shrinkingthe semiconductor process node towards the sub-20 nm node), which allowsmore components to be integrated into a given area. As the demand forminiaturization, higher speed and greater bandwidth, as well as lowerpower consumption and latency has grown recently, there has grown a needfor smaller and more creative packaging techniques of semiconductordies.

As semiconductor technologies further advance, stacked and bondedsemiconductor devices have emerged as an effective alternative tofurther reduce the physical size of a semiconductor device. In a stackedsemiconductor device, active circuits such as logic, memory, processorcircuits and the like are fabricated at least partially on separatesubstrates and then physically and electrically bonded together in orderto form a functional device. Such bonding processes utilizesophisticated techniques, and improvements are desired.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a formation of vias in accordance with someembodiments.

FIG. 2 illustrates a first semiconductor device in accordance with someembodiments.

FIG. 3 illustrates a placement of the first semiconductor device and asecond semiconductor device in accordance with some embodiments.

FIG. 4 illustrates an encapsulation of the vias, the first semiconductordevice, and the second semiconductor device in accordance with someembodiments.

FIGS. 5A-5C illustrate a formation of a redistribution structure inaccordance with some embodiments.

FIG. 6 illustrate an exposure of the vias in accordance with someembodiments.

FIGS. 7A-7B illustrate a bonding of a package in accordance with someembodiments.

FIGS. 8A-8B illustrate an open scribe line in accordance with someembodiments.

FIG. 9 illustrates a first embodiment of an ultra-low temperature curingprocess in accordance with some embodiments.

FIG. 10 illustrates a second embodiment of an ultra-low temperaturecuring process in accordance with some embodiments.

FIG. 11 illustrates test data of materials formed using an ultra-lowtemperature curing process in accordance with some embodiments.

FIG. 12 illustrates structural effects of using an ultra-low temperaturecuring process in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

With reference now to FIG. 1 , there is shown a first carrier substrate101 with an adhesive layer 103, a polymer layer 105, and a first seedlayer 107 over the first carrier substrate 101. The first carriersubstrate 101 comprises, for example, silicon based materials, such asglass or silicon oxide, or other materials, such as aluminum oxide,combinations of any of these materials, or the like. The first carriersubstrate 101 is planar in order to accommodate an attachment ofsemiconductor devices such as a first semiconductor device 201 and asecond semiconductor device 301 (not illustrated in FIG. 1 butillustrated and discussed below with respect to FIGS. 2-3 ).

The adhesive layer 103 is placed on the first carrier substrate 101 inorder to assist in the adherence of overlying structures (e.g., thepolymer layer 105). In an embodiment the adhesive layer 103 may comprisean ultra-violet glue, which loses its adhesive properties when exposedto ultra-violet light. However, other types of adhesives, such aspressure sensitive adhesives, radiation curable adhesives, epoxies,combinations of these, or the like, may also be used. The adhesive layer103 may be placed onto the first carrier substrate 101 in a semi-liquidor gel form, which is readily deformable under pressure.

The polymer layer 105 is placed over the adhesive layer 103 and isutilized in order to provide protection to, e.g., the firstsemiconductor device 201 and the second semiconductor device 301 oncethe first semiconductor device 201 and the second semiconductor device301 have been attached. In an embodiment the polymer layer 105 may be apositive tone material such as polybenzoxazole (PBO, such as thematerial HD8820), although any suitable material, such as polyimide or apolyimide derivative, may also be utilized. The polymer layer 105 may beplaced using, e.g., a spin-coating process to a thickness of betweenabout 0.5 μm and about 10 such as about 5 although any suitable methodand thickness may be used.

The first seed layer 107 is formed over the polymer layer 105. In anembodiment the first seed layer 107 is a thin layer of a conductivematerial that aids in the formation of a thicker layer during subsequentprocessing steps. The first seed layer 107 may comprise a layer oftitanium about 1,000 Å thick followed by a layer of copper about 5,000 Åthick. The first seed layer 107 may be created using processes such assputtering, evaporation, or PECVD processes, depending upon the desiredmaterials. The first seed layer 107 may be formed to have a thickness ofbetween about 0.3 μm and about 1 μm, such as about 0.5 μm.

FIG. 1 also illustrates a placement and patterning of a photoresist 109over the first seed layer 107. In an embodiment the photoresist 109 maybe placed on the first seed layer 107 using, e.g., a spin coatingtechnique to a height of between about 50 μm and about 250 μm, such asabout 120 μm. Once in place, the photoresist 109 may then be patternedby exposing the photoresist 109 to a patterned energy source (e.g., apatterned light source) so as to induce a chemical reaction, therebyinducing a physical change in those portions of the photoresist 109exposed to the patterned light source. A developer is then applied tothe exposed photoresist 109 to take advantage of the physical changesand selectively remove either the exposed portion of the photoresist 109or the unexposed portion of the photoresist 109, depending upon thedesired pattern.

In an embodiment the pattern formed into the photoresist 109 is apattern for vias 111. The vias 111 are formed in such a placement as tobe located on different sides of subsequently attached devices such asthe first semiconductor device 201 and the second semiconductor device301. However, any suitable arrangement for the pattern of vias 111, suchas by being located such that the first semiconductor device 201 and thesecond semiconductor device are placed on opposing sides of the vias111, may be utilized.

In an embodiment the vias 111 are formed within the photoresist 109. Inan embodiment the vias 111 comprise one or more conductive materials,such as copper, tungsten, other conductive metals, or the like, and maybe formed, for example, by electroplating, electroless plating, or thelike. In an embodiment, an electroplating process is used wherein thefirst seed layer 107 and the photoresist 109 are submerged or immersedin an electroplating solution. The first seed layer 107 surface iselectrically connected to the negative side of an external DC powersupply such that the first seed layer 107 functions as the cathode inthe electroplating process. A solid conductive anode, such as a copperanode, is also immersed in the solution and is attached to the positiveside of the power supply. The atoms from the anode are dissolved intothe solution, from which the cathode, e.g., the first seed layer 107,acquires the dissolved atoms, thereby plating the exposed conductiveareas of the first seed layer 107 within the opening of the photoresist109.

Once the vias 111 have been formed using the photoresist 109 and thefirst seed layer 107, the photoresist 109 may be removed using asuitable removal process (not illustrated in FIG. 1 but seen in FIG. 3below). In an embodiment, a plasma ashing process may be used to removethe photoresist 109, whereby the temperature of the photoresist 109 maybe increased until the photoresist 109 experiences a thermaldecomposition and may be removed. However, any other suitable process,such as a wet strip, may alternatively be utilized. The removal of thephotoresist 109 may expose the underlying portions of the first seedlayer 107.

Once exposed a removal of the exposed portions of the first seed layer107 may be performed (not illustrated in FIG. 1 but seen in FIG. 3below). In an embodiment the exposed portions of the first seed layer107 (e.g., those portions that are not covered by the vias 111) may beremoved by, for example, a wet or dry etching process. For example, in adry etching process reactants may be directed towards the first seedlayer 107 using the vias 111 as masks. In another embodiment, etchantsmay be sprayed or otherwise put into contact with the first seed layer107 in order to remove the exposed portions of the first seed layer 107.After the exposed portion of the first seed layer 107 has been etchedaway, a portion of the polymer layer 105 is exposed between the vias111.

FIG. 2 illustrates a first semiconductor device 201 that will beattached to the polymer layer 105 within the vias 111 (not illustratedin FIG. 2 but illustrated and described below with respect to FIG. 3 ).In an embodiment the first semiconductor device 201 comprises a firstsubstrate 203, first active devices (not individually illustrated),first metallization layers 205, first contact pads 207, a firstpassivation layer 211, and first external connectors 209. The firstsubstrate 203 may comprise bulk silicon, doped or undoped, or an activelayer of a silicon-on-insulator (SOI) substrate. Generally, an SOIsubstrate comprises a layer of a semiconductor material such as silicon,germanium, silicon germanium, SOI, silicon germanium on insulator(SGOI), or combinations thereof. Other substrates that may be usedinclude multi-layered substrates, gradient substrates, or hybridorientation substrates.

The first active devices comprise a wide variety of active devices andpassive devices such as capacitors, resistors, inductors and the likethat may be used to generate the desired structural and functionalrequirements of the design for the first semiconductor device 201. Thefirst active devices may be formed using any suitable methods eitherwithin or else on the first substrate 203.

The first metallization layers 205 are formed over the first substrate203 and the first active devices and are designed to connect the variousactive devices to form functional circuitry. In an embodiment the firstmetallization layers 205 are formed of alternating layers of dielectricand conductive material and may be formed through any suitable process(such as deposition, damascene, dual damascene, etc.). In an embodimentthere may be four layers of metallization separated from the firstsubstrate 203 by at least one interlayer dielectric layer (ILD), but theprecise number of first metallization layers 205 is dependent upon thedesign of the first semiconductor device 201.

The first contact pads 207 may be formed over and in electrical contactwith the first metallization layers 205. The first contact pads 207 maycomprise aluminum, but other materials, such as copper, mayalternatively be used. The first contact pads 207 may be formed using adeposition process, such as sputtering, to form a layer of material (notshown) and portions of the layer of material may then be removed througha suitable process (such as photolithographic masking and etching) toform the first contact pads 207. However, any other suitable process maybe utilized to form the first contact pads 207. The first contact padsmay be formed to have a thickness of between about 0.5 μm and about 4μm,such as about 1.45 μm.

The first passivation layer 211 may be formed on the first substrate 203over the first metallization layers 205 and the first contact pads 207.The first passivation layer 211 may be made of one or more suitabledielectric materials such as polybenzoxazole (PBO), although anysuitable material, such as polyimide or a polyimide derivative, mayalternatively be utilized. The first passivation layer 211 may be placedusing, e.g., a spin-coating process to a thickness of between about 5 μmand about 25 μm such as about 7 μm, although any suitable method andthickness may alternatively be used

The first external connectors 209 may be formed to provide conductiveregions for contact between the first contact pads 207 and, e.g., afirst redistribution layer 505 (not illustrated in FIG. 2 butillustrated and described below with respect to FIG. 5B). In anembodiment the first external connectors 209 may be conductive pillarsand may be formed by initially forming a photoresist (not shown) overthe first passivation layer 211 to a thickness between about 5 μm toabout 20 μm, such as about 10 μm. The photoresist may be patterned toexpose portions of the first passivation layers 211 through which theconductive pillars will extend. Once patterned, the photoresist may thenbe used as a mask to remove the desired portions of the firstpassivation layer 211, thereby exposing those portions of the underlyingfirst contact pads 207 to which the first external connectors 209 willmake contact.

The first external connectors 209 may be formed within the openings ofboth the first passivation layer 211 and the photoresist. The firstexternal connectors 209 may be formed from a conductive material such ascopper, although other conductive materials such as nickel, gold, ormetal alloy, combinations of these, or the like may also be used.Additionally, the first external connectors 209 may be formed using aprocess such as electroplating, by which an electric current is runthrough the conductive portions of the first contact pads 207 to whichthe first external connectors 209 are desired to be formed, and thefirst contact pads 207 are immersed in a solution. The solution and theelectric current deposit, e.g., copper, within the openings in order tofill and/or overfill the openings of the photoresist and the firstpassivation layer 211, thereby forming the first external connectors209. Excess conductive material and photoresist outside of the openingsof the first passivation layer 211 may then be removed using, forexample, an ashing process, a chemical mechanical polish (CMP) process,combinations of these, or the like.

However, as one of ordinary skill in the art will recognize, the abovedescribed process to form the first external connectors 209 is merelyone such description, and is not meant to limit the embodiments to thisexact process. Rather, the described process is intended to be merelyillustrative, as any suitable process for forming the first externalconnectors 209 may alternatively be utilized. All suitable processes arefully intended to be included within the scope of the presentembodiments.

A die attach film (DAF) 217 may be placed on an opposite side of thefirst substrate 203 in order to assist in the attachment of the firstsemiconductor device 201 to the polymer layer 105. In an embodiment thedie attach film 217 is an epoxy resin, a phenol resin, acrylic rubber,silica filler, or a combination thereof, and is applied using alamination technique. However, any other suitable alternative materialand method of formation may alternatively be utilized.

FIG. 3 illustrates a placement of the first semiconductor device 201onto the polymer layer 105 along with a placement of the secondsemiconductor device 301. In an embodiment the second semiconductordevice 301 may comprise a second substrate 303, second active devices(not individually illustrated), second metallization layers 305, secondcontact pads 307, a second passivation layer 311, and second externalconnectors 309. In an embodiment the second substrate 303, the secondactive devices, the second metallization layers 305, the second contactpads 307, the second passivation layer 311, and the second externalconnectors 309 may be similar to the first substrate 203, the firstactive devices, the first metallization layers 205, the first contactpads 207, the first passivation layer 211, and the first externalconnectors 209, although they may also be different.

In an embodiment the first semiconductor device 201 and the secondsemiconductor device 301 may be placed onto the polymer layer 105 using,e.g., a pick and place process. However, any other method of placing thefirst semiconductor device 201 and the second semiconductor device 301may also be utilized.

FIG. 4 illustrates an encapsulation of the vias 111, the firstsemiconductor device 201 and the second semiconductor device 301. Theencapsulation may be performed in a molding device (not illustrated inFIG. 4 ), which may comprise a top molding portion and a bottom moldingportion separable from the top molding portion. When the top moldingportion is lowered to be adjacent to the bottom molding portion, amolding cavity may be formed for the first carrier substrate 101, thevias 111, the first semiconductor device 201, and the secondsemiconductor device 301.

During the encapsulation process the top molding portion may be placedadjacent to the bottom molding portion, thereby enclosing the firstcarrier substrate 101, the vias 111, the first semiconductor device 201,and the second semiconductor device 301 within the molding cavity. Onceenclosed, the top molding portion and the bottom molding portion mayform an airtight seal in order to control the influx and outflux ofgasses from the molding cavity. Once sealed, an encapsulant 401 may beplaced within the molding cavity. The encapsulant 401 may be a moldingcompound resin such as polyimide, PPS, PEEK, PES, a heat resistantcrystal resin, combinations of these, or the like. The encapsulant 401may be placed within the molding cavity prior to the alignment of thetop molding portion and the bottom molding portion, or else may beinjected into the molding cavity through an injection port.

Once the encapsulant 401 has been placed into the molding cavity suchthat the encapsulant 401 encapsulates the first carrier substrate 101,the vias 111, the first semiconductor device 201, and the secondsemiconductor device 301, the encapsulant 401 may be cured in order toharden the encapsulant 401 for optimum protection. While the exactcuring process is dependent at least in part on the particular materialchosen for the encapsulant 401, in an embodiment in which moldingcompound is chosen as the encapsulant 401, the curing could occurthrough a process such as heating the encapsulant 401 to between about100° C. and about 130° C., such as about 125° C. for about 60 sec toabout 3000 sec, such as about 600 sec. Additionally, initiators and/orcatalysts may be included within the encapsulant 401 to better controlthe curing process.

However, as one having ordinary skill in the art will recognize, thecuring process described above is merely an exemplary process and is notmeant to limit the current embodiments. Other curing processes, such asirradiation or even allowing the encapsulant 401 to harden at ambienttemperature, may alternatively be used. Any suitable curing process maybe used, and all such processes are fully intended to be included withinthe scope of the embodiments discussed herein.

FIG. 4 also illustrates a thinning of the encapsulant 401 in order toexpose the vias 111, the first semiconductor device 201, and the secondsemiconductor device 301 for further processing. The thinning may beperformed, e.g., using a mechanical grinding or chemical mechanicalpolishing (CMP) process whereby chemical etchants and abrasives areutilized to react and grind away the encapsulant 401, the firstsemiconductor device 201 and the second semiconductor device 301 untilthe vias 111, the first external connectors 209 (on the firstsemiconductor device 201), and the second external connectors 309 (onthe second semiconductor device 301) have been exposed. As such, thefirst semiconductor device 201, the second semiconductor device 301, andthe vias 111 may have a planar surface that is also planar with theencapsulant 401.

However, while the CMP process described above is presented as oneillustrative embodiment, it is not intended to be limiting to theembodiments. Any other suitable removal process may alternatively beused to thin the encapsulant 401, the first semiconductor device 201,and the second semiconductor device 301 and expose the vias 111. Forexample, a series of chemical etches may be utilized. This process andany other suitable process may alternatively be utilized to thin theencapsulant 401, the first semiconductor device 201, and the secondsemiconductor device 301, and all such processes are fully intended tobe included within the scope of the embodiments.

FIGS. 5A-5B illustrate a formation of a redistribution structure 500over the encapsulant 401 and the now exposed first semiconductor device201, second semiconductor device, and vias 111, with FIG. 5Billustrating a close up view of the dashed box 502 in FIG. 5A. In anembodiment the redistribution structure 500 may be formed by initiallyforming a first redistribution passivation layer 501 over theencapsulant 401. In an embodiment the first redistribution passivationlayer 501 may be polybenzoxazole (PBO), although any suitable material,such as polyimide or a polyimide derivative, may alternatively beutilized. The first redistribution passivation layer 501 may be placedusing, e.g., a spin-coating process to a thickness of between about 5 μmand about 17 μm, such as about 7 μm, although any suitable method andthickness may alternatively be used.

Once the first redistribution passivation layer 501 has been formed,first redistribution vias 503 may be formed through the firstredistribution passivation layer 501 in order to make electricalconnections to the first semiconductor device 201, the secondsemiconductor device 301, and the vias 111. In an embodiment the firstredistribution vias 503 may be formed by using, e.g., damascene processwhereby the first redistribution passivation layer 501 is initiallypatterned to form openings using, e.g., a photolithographic masking andetching process or, if the material of the first redistributionpassivation layer 501 is photosensitive, exposing and developing thematerial of the first redistribution passivation layer 501. Oncepatterned, the openings are filled with a conductive material such ascopper and any excess material is removed using, e.g., a planarizationprocess such as chemical mechanical polishing. However, any suitableprocess or materials may be utilized.

After the first redistribution vias 503 have been formed, a firstredistribution layer 505 is formed over an in electrical connection withthe first redistribution vias 503. In an embodiment the firstredistribution layer 505 may be formed by initially forming a seed layer(not shown) of a titanium copper alloy through a suitable formationprocess such as CVD or sputtering. A photoresist (also not shown) maythen be formed to cover the seed layer, and the photoresist may then bepatterned to expose those portions of the seed layer that are locatedwhere the first redistribution layer 505 is desired to be located.

Once the photoresist has been formed and patterned, a conductivematerial, such as copper, may be formed on the seed layer through adeposition process such as plating. The conductive material may beformed to have a thickness of between about 1 μm and about 10 μm, suchas about 5μm. However, while the material and methods discussed aresuitable to form the conductive material, these materials are merelyexemplary. Any other suitable materials, such as AlCu or Au, and anyother suitable processes of formation, such as CVD or PVD, mayalternatively be used to form the first redistribution layer 505.

Once the conductive material has been formed, the photoresist may beremoved through a suitable removal process such as chemical strippingand/or ashing. Additionally, after the removal of the photoresist, thoseportions of the seed layer that were covered by the photoresist may beremoved through, for example, a suitable etch process using theconductive material as a mask.

Optionally, if desired, after the first redistribution layer 505 hasbeen formed, a surface treatment of the first redistribution layer 505may be performed in order to help protect the first redistribution layer505. In an embodiment the surface treatment may be a descum treatmentsuch as a plasma treatment wherein the surface of the firstredistribution layer 505 is exposed to a plasma of, e.g., argon,nitrogen, oxygen or a mixed Ar/N2/O2 ambient environment in order toimprove the interface adhesion between the first redistribution layer505 and overlying layers (e.g., the second redistribution passivationlayer 507). However, any suitable surface treatment may be utilized.

After the first redistribution layer 505 has been formed, a secondredistribution passivation layer 507 may be formed to help isolate thefirst redistribution layer 505. In an embodiment the secondredistribution passivation layer 507 may be a different material thanthe first redistribution passivation layer 501 and may be, for example,a dielectric material with a higher adhesion to the underlying layers(e.g., the first redistribution layer 505 and the first redistributionpassivation layer 501) such as a low-temperature cured polyimide, anegative tone material with a lower under-developing risk than thepositive tone PBO used for the first redistribution passivation layer501.

In one particular embodiment in which the low-temperature curedpolyimide is used for the composition, the low-temperature curedpolyimide may be formed by initially generating a low-temperature curedpolyimide composition, which may comprise a low-temperature curedpolyimide resin along with a photoactive components (PACs) placed into alow-temperature cured polyimide solvent. In an embodiment thelow-temperature cured polyimide resin may comprise a polymer that ismade up of monomers of the following formula:

Additionally, while the low-temperature cured polyimide resin may be oneof the embodiments as described above, the low-temperature curedpolyimide resin is not intended to be limited to only the specificexamples described herein. Rather, any suitable low-temperature curedpolyimide resin may alternatively be utilized, and all suchphotosensitive polyimide resins are fully intended to be included withinthe scope of the embodiments.

The PACs may be photoactive components such as photoacid generators,photobase generators, free-radical generators, or the like, and the PACsmay be positive-acting or negative-acting. In an embodiment in which thePACs are a photoacid generator, the PACs may comprise halogenatedtriazines, onium salts, diazonium salts, aromatic diazonium salts,phosphonium salts, sulfonium salts, iodonium salts, imide sulfonate,oxime sulfonate, disulfone, o-nitrobenzylsulfonate, sulfonated esters,halogenerated sulfonyloxy dicarboximides, diazodisulfones,α-cyanooxyamine-sulfonates, imidesulfonates, ketodiazosulfones,sulfonyldiazoesters, 1,2-di(arylsulfonyl)hydrazines, nitrobenzyl esters,and the s-triazine derivatives, suitable combinations of these, and thelike.

Specific examples of photoacid generators that may be used includeα.-(trifluoromethylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarbo-ximide(MDT), N-hydroxy-naphthalimide (DDSN), benzoin tosylate,t-butylphenyl-α-(p-toluenesulfonyloxy)-acetate andt-butyl-α-(p-toluenesulfonyloxy)-acetate, triarylsulfonium anddiaryliodonium hexafluoroantimonates, hexafluoroarsenates,trifluoromethanesulfonates, iodonium perfluorooctanesulfonate,N-camphorsulfonyloxynaphthalimide,N-pentafluorophenylsulfonyloxynaphthalimide, ionic iodonium sulfonatessuch as diaryl iodonium (alkyl or aryl) sulfonate andbis-(di-t-butylphenyl)iodonium camphanylsulfonate,perfluoroalkanesulfonates such as perfluoropentanesulfonate,perfluorooctanesulfonate, perfluoromethanesulfonate, aryl (e.g., phenylor benzyl) triflates such as triphenylsulfonium triflate orbis-(t-butylphenyl)iodonium triflate; pyrogallol derivatives (e.g.,trimesylate of pyrogallol), trifluoromethanesulfonate esters ofhydroxyimides, α,α′-bis-sulfonyl-diazomethanes, sulfonate esters ofnitro-substituted benzyl alcohols, naphthoquinone-4-diazides, alkyldisulfones, and the like.

In an embodiment in which the PACs are a free-radical generator, thePACs may comprise n-phenylglycine, aromatic ketones such asbenzophenone, N,N′-tetramethyl-4,4′-diaminobenzophenone,N,N′-tetraethyl-4,4′-diaminobenzophenone,4-methoxy-4′-dimethylaminobenzo-phenone,3,3′-dimethyl-4-methoxybenzophenone,p,p′-bis(dimethylamino)benzo-phenone,p,p′-bis(diethylamino)-benzophenone, anthraquinone,2-ethylanthraquinone, naphthaquinone and phenanthraquinone, benzoinssuch as benzoin, benzoinmethylether, benzoinethylether,benzoinisopropylether, benzoin-n-butylether, benzoin-phenylether,methylbenzoin and ethybenzoin, benzyl derivatives such as dibenzyl,benzyldiphenyldisulfide and benzyldimethylketal, acridine derivativessuch as 9-phenylacridine and 1,7-bis(9-acridinyl)heptane, thioxanthonessuch as 2-chlorothioxanthone, 2-methylthioxanthone,2,4-diethylthioxanthone, 2,4-dimethylthioxanthone and2-isopropylthioxanthone, acetophenones such as 1,1-dichloroacetophenone,p-t-butyldichloro-acetophenone, 2,2-diethoxyacetophenone,2,2-dimethoxy-2-phenylacetophenone, and2,2-dichloro-4-phenoxyacetophenone, 2,4,5-triarylimidazole dimers suchas 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer,2-(o-chlorophenyl)-4,5-di-(m-methoxyphenyl imidazole dimer,2-(o-fluorophenyl)-4,5-diphenylimidazole dimer,2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer,2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer, 2,4-di(p-methoxyphenyl)-5-phenylimidazole dimer,2-(2,4-dimethoxyphenyl)-4,5-diphenylimidazole dimer and2-(p-methylmercaptophenyl)-4,5-diphenylimidazole dimmer, suitablecombinations of these, or the like.

In an embodiment in which the PACs are a photobase generator, the PACsmay comprise quaternary ammonium dithiocarbamates, α aminoketones,oxime-urethane containing molecules such as dibenzophenoneoximehexamethylene diurethan, ammonium tetraorganylborate salts, andN-(2-nitrobenzyloxycarbonyl) cyclic amines, suitable combinations ofthese, or the like. However, as one of ordinary skill in the art willrecognize, the chemical compounds listed herein are merely intended asillustrated examples of the PACs and are not intended to limit theembodiments to only those PACs specifically described. Rather, anysuitable PAC may alternatively be utilized, and all such PACs are fullyintended to be included within the scope of the present embodiments.

In an embodiment the low-temperature cured polyimide solvent may be anorganic solvent, and may comprise any suitable solvent such as ketones,alcohols, polyalcohols, ethers, glycol ethers, cyclic ethers, aromatichydrocarbons, esters, propionates, lactates, lactic esters, alkyleneglycol monoalkyl ethers, alkyl lactates, alkyl alkoxypropionates, cycliclactones, monoketone compounds that contain a ring, alkylene carbonates,alkyl alkoxyacetate, alkyl pyruvates, ethylene glycol alkyl etheracetates, diethylene glycols, propylene glycol alkyl ether acetates,alkylene glycol alkyl ether esters, alkylene glycol monoalkyl esters, orthe like.

Specific examples of materials that may be used as the low-temperaturecured polyimide solvent for the low-temperature cured polyimidecomposition include acetone, methanol, ethanol, toluene, xylene,4-hydroxy-4-methyl-2-pentatone, tetrahydrofuran, methyl ethyl ketone,cyclohexanone, methyl isoamyl ketone, 2-heptanone, ethylene glycol,ethylene glycol monoacetate, ethylene glycol dimethyl ether, ethyleneglycol methylethyl ether, ethylene glycol monoethyl ether, methylcellusolve acetate, ethyl cellosolve acetate, diethylene glycol,diethylene glycol monoacetate, diethylene glycol monomethyl ether,diethylene glycol diethyl ether, diethylene glycol dimethyl ether,diethylene glycol ethylmethyl ether, diethylene glycol monoethyl ether,diethylene glycol monobutyl ether, ethyl 2-hydroxypropionate, methyl2-hydroxy-2-methylpropionate, ethyl 2 -hydroxy-2-methylpropionate, ethylethoxyacetate, ethyl hydroxyacetate, methyl 2-hydroxy-2-methylbutanate,methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl acetate, butylacetate, methyl lactate and ethyl lactate, propylene glycol, propyleneglycol monoacetate, propylene glycol monoethyl ether acetate, propyleneglycol monomethyl ether acetate, propylene glycol monopropyl methylether acetate, propylene glycol monobutyl ether acetate, propyleneglycol monobutyl ether acetate, propylene glycol monomethyl etherpropionate, propylene glycol monoethyl ether propionate, propyleneglycol methyl ether adcetate, proplylene glycol ethyl ether acetate,ethylene glycol monomethyl ether acetate, ethylene glycol monoethylether acetate, propylene glycol monomethyl ether, propylene glycolmonoethyl ether, propylene glycol monopropyl ether, propylene glycolmonobutyl ether, ethylene glycol monomethyl ether, ethylene glycolmonoethyl ether, propyl lactate, and butyl lactate, ethyl3-ethoxypropionate, methyl 3-methoxypropionate, methyl3-ethoxypropionate, and ethyl 3-methoxypropionate, β-propiolactone,β-butyrolactone, γ-butyrolactone, α-methyl-γ-butyrolactone,β-methyl-γ-butyrolactone, γ-valerolactone, γ-caprolactone, γ-octanoiclactone, α-hydroxy-γ-butyrolactone, 2-butanone, 3-methylbutanone,pinacolone, 2-pentanone, 3-pentanone, 4-methyl-2-pentanone,2-methyl-3-pentanone, 4,4-dimethyl-2-pentanone,2,4-dimethyl-3-pentanone, 2,2,4,4-tetramethyl-3-pentanone, 2-hexanone,3-hexanone, 5-methyl-3-hexanone, 2-heptanone, 3-heptanone, 4-heptanone,2-methyl-3-heptanone, 5-methyl-3-heptanone, 2,6-dimethyl-4-heptanone,2-octanone, 3-octanone, 2-nonanone, 3-nonanone, 5-nonanone, 2-decanone,3-decanone, 4-decanone, 5-hexene-2-one, 3-pentene-2-one, cyclopentanone,2-methylcyclopentanone, 3-methylcyclopentanone, 2,2-dimethylcyclopentanone, 2,4,4 -trimethylcyclopentanone, cyclohexanone,3-methylcyclohexanone, 4-methylcyclohexanone, 4-ethylcyclohexanone,2,2-dimethylcyclohexanone, 2,6 -dimethylcyclohexanone, 2,2,6-trimethylcyclohexanone, cycloheptanone, 2-methylcycloheptanone,3-methylcycloheptanone, pylene carbonate, vinylene carbonate, ethylenecarbonate, and butylene carbonate, acetate-2-methoxyethyl,acetate-2-ethoxyethyl, acetate-2-(2-ethoxyethoxy)ethyl,acetate-3-methoxy-3-methylbutyl, acetate-1-methoxy-2-propyl, dipropyleneglycol, monomethylether, monoethylether, monopropylether,monobutylehter, monophenylether, dipropylene glycol monoacetate,dioxane, etheyl lactate, methyl acetate, ethyl acetate, butyl acetate,methyl puruvate, ethyl puruvate, propyl pyruvate, methylmethoxypropionate, ethyl ethoxypropionate, n-methylpyrrolidone (NMP),2-methoxyethyl ether (diglyme), ethylene glycol monom-ethyl ether,propylene glycol monomethyl ether; methyl proponiate, ethyl proponiateand ethyl ethoxy proponiate, methylethyl ketone, cyclohexanone,2-heptanone, carbon dioxide, cyclopentatone, cyclohexanone, ethyl3-ethocypropionate, propylene glycol methyl ether acetate (PGMEA),methylene cellosolve, butyle acetate, and 2-ethoxyethanol,N-methylformamide, N,N-dimethylformamide, N-methylformanilide,N-methylacetamide, N,N-dimethylacetamide, N-methylpyrrolidone,dimethylsulfoxide, benzyl ethyl ether, dihexyl ether, acetonylacetone,isophorone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzylalcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethylmaleate, γ-butyrolactone, ethylene carbonate, propylene carbonate,phenyl cellosolve acetate, or the like.

In an embodiment the low-temperature cured polyimide resin and the PACs,along with any desired additives or other agents, are added to thelow-temperature cured polyimide solvent for application. For example,the low-temperature cured polyimide resin may have a concentration ofbetween about 5% and about 50%, such as about 25%, while the PACs mayhave a concentration of between about 0.1% and about 20%, such as about5%. Once added, the mixture is then mixed in order to achieve an evencomposition throughout the low-temperature cured polyimide compositionin order to ensure that there are no defects caused by an uneven mixingor non-constant composition. Once mixed together, the low-temperaturecured polyimide composition may either be stored prior to its usage orelse used immediately.

Once ready, the second redistribution passivation layer 507 may beutilized by initially applying the low-temperature cured polyimidecomposition onto the first redistribution layer 505 and the firstredistribution passivation layer 501. The second redistributionpassivation layer 507 may be applied to the first redistribution layer505 so that the second redistribution passivation layer 507 coats anupper exposed surface of the first redistribution layer 505, and may beapplied using a process such as a spin-on coating process, a dip coatingmethod, an air-knife coating method, a curtain coating method, awire-bar coating method, a gravure coating method, a lamination method,an extrusion coating method, combinations of these, or the like. Thesecond redistribution passivation layer 507 may be placed to a thicknessof between about 7 μm to about 35 μm.

Once applied, the second redistribution passivation layer 507 may bebaked in order to cure and dry the second redistribution passivationlayer 507 prior to exposure (described further below). The curing anddrying of the second redistribution passivation layer 507 removes thesolvent components while leaving behind the resin, the PACs, and anyother chosen additives. In an embodiment the pre-bake may be performedat a temperature suitable to evaporate the solvent, such as betweenabout 40° C. and 150° C., such as about 150° C., although the precisetemperature depends upon the materials chosen for the secondredistribution passivation layer 507. The pre-bake is performed for atime sufficient to cure and dry the second redistribution passivationlayer 507, such as between about 10 seconds to about 5 minutes, such asabout 270 seconds.

Once cured and dried, the second redistribution passivation layer 507may be patterned in order to form openings to first redistribution layer505. In an embodiment the patterning may be initiated by placing thesecond redistribution passivation layer 507 into a imaging device (notseparately illustrated in FIGS. 5A-5B) for exposure. The imaging devicemay comprise a support plate, a energy source, and a patterned maskbetween the support plate and the energy source.

In an embodiment the energy source supplies energy such as light to thesecond redistribution passivation layer 507 in order to induce areaction of the PACs, which in turn reacts with the secondredistribution passivation layer polymer resin to chemically alter thoseportions of the second redistribution passivation layer 507 to which theenergy impinges. In an embodiment the energy may be electromagneticradiation, such as g-rays (with a wavelength of about 436 nm), i-rays(with a wavelength of about 365 nm), ultraviolet radiation, farultraviolet radiation, x-rays, electron beams, or the like. The energysource may be a source of the electromagnetic radiation, and may be aKrF excimer laser light (with a wavelength of 248 nm), an ArF excimerlaser light (with a wavelength of 193 nm), a F2 excimer laser light(with a wavelength of 157 nm), or the like, although any other suitablesource of energy, such as mercury vapor lamps, xenon lamps, carbon arclamps or the like, may also be utilized.

The patterned mask is located between the energy source and the secondredistribution passivation layer 507 in order to block portions of theenergy to form a patterned energy prior to the energy actually impingingupon the second redistribution passivation layer 507. In an embodimentthe patterned mask may comprise a series of layers (e.g., substrate,absorbance layers, anti-reflective coating layers, shielding layers,etc.) to reflect, absorb, or otherwise block portions of the energy fromreaching those portions of the second redistribution passivation layer507 which are not desired to be illuminated. The desired pattern may beformed in the patterned mask by forming openings through the patternedmask in the desired shape of illumination.

In an embodiment the second redistribution passivation layer 507 isplaced on the support plate. Once the pattern has been aligned to thesecond redistribution passivation layer 507, the energy source generatesthe desired energy (e.g., light) which passes through the patterned maskon its way to the second redistribution passivation layer 507. Thepatterned energy impinging upon portions of the second redistributionpassivation layer 507 induces a reaction of the PACs within the secondredistribution passivation layer 507. The chemical reaction products ofthe PACs' absorption of the patterned energy (e.g., acids/bases/freeradicals) then reacts with the second redistribution passivation layerpolymer resin, chemically altering the second redistribution passivationlayer 507 in those portions that were illuminated through the patternedmask.

After the second redistribution passivation layer 507 has been exposed,a first post-exposure bake (PEB) may be used in order to assist in thegenerating, dispersing, and reacting of the acid/base/free radicalgenerated from the impingement of the energy upon the PACs during theexposure. Such assistance helps to create or enhance chemical reactionswhich generate chemical differences and different polarities betweenthose regions impinged by the energy and those regions that were notimpinged by the energy. These chemical differences also causedifferences in the solubility between the regions impinged by the energyand those regions that were not impinged by the energy. In an embodimentthe temperature of the second redistribution passivation layer 507 maybe increased to between about 70° C. and about 150° C. for a period ofbetween about 40 seconds and about 120 seconds, such as about 2 minutes.In a particular, embodiments, the post-development bake may be performedat temperatures of 140° C., 150° C., 130° C., 110° C., 90° C. and 70°C., each for about 2 minutes.

Once the second redistribution passivation layer 507 has been exposedand baked, the second redistribution passivation layer 507 may bedeveloped with the use of a developer. In an embodiment in which thesecond redistribution passivation layer 507 is the low temperature curedpolyimide, the first developer may be an organic solvent or criticalfluid may be utilized to remove those portions of the secondredistribution passivation layer 507 which were not exposed to theenergy and, as such, retain their original solubility. Specific examplesof materials that may be utilized include hydrocarbon solvents, alcoholsolvents, ether solvents, ester solvents, critical fluids, combinationsof these, or the like. Specific examples of materials that can be usedfor the negative tone solvent include cyclopentanon (A515), hexane,heptane, octane, toluene, xylene, dichloromethane, chloroform, carbontetrachloride, trichloroethylene, methanol, ethanol, propanol, butanol,critical carbon dioxide, diethyl ether, dipropyl ether, dibutyl ether,ethyl vinyl ether, dioxane, propylene oxide, tetrahydrofuran,cellosolve, methyl cellosolve, butyl cellosolve, methyl carbitol,diethylene glycol monoethyl ether, acetone, methyl ethyl ketone, methylisobutyl ketone, isophorone, cyclohexanone, methyl acetate, ethylacetate, propyl acetate, butyl acetate, pyridine, formamide,N,N-dimethyl formamide, or the like.

The first developer may be applied to the second redistributionpassivation layer 507 using, e.g., a spin-on process. In this processthe first developer is applied to the second redistribution passivationlayer 507 from above the second redistribution passivation layer 507while the second redistribution passivation layer 507 is rotated. In anembodiment the first developer may be at a temperature of between about10° C. and about 80° C., such as about 50° C., and the development maycontinue for between about 1 minute to about 60 minutes, such as about30 minutes. In an embodiment in which low temperature cured polyimide isutilized for the second redistribution passivation layer 507, thematerial of the low temperature cured polyimide has a dissolution ratebetween the exposed and the non-exposed regions of greater than 6 (whilePBO may have a dissolution rate of about 3.5).

However, while the spin-on method described herein is one suitablemethod for developing the second redistribution passivation layer 507after exposure, it is intended to be illustrative and is not intended tolimit the embodiments. Rather, any suitable method for development,including dip processes, puddle processes, spray-on processes,combinations of these, or the like, may alternatively be used. All suchdevelopment processes are fully intended to be included within the scopeof the embodiments.

Once the second redistribution passivation layer 507 has been developed,the second redistribution passivation layer 507 may be rinsed. In anembodiment the second redistribution passivation layer 507 may be rinsedwith a rinsing liquid such as propylene glycol monomethyl ether acetate(C260), although any suitable rinse solution, such as water, may beused.

After development a post development baking process may be utilized inorder to help polymerize and stabilize the second redistributionpassivation layer 507 after the development process. In an embodimentthe post-developing baking process may be performed at a temperature ofbetween about 80° C. and about 200° C., such as about 140° C. for a timeof between about 60 sec and about 300 sec, such as about 2 minutes.

After the post-development baking and the RDL surface treatments, thesecond redistribution passivation layer 507 may be cured. In anembodiment in which the second redistribution passivation layer 507comprises a low temperature cured polyimide, the curing process may beperformed at a low temperature of less than about 230° C., such as atemperature of between about 200° C. and 230° C., such as about 220° C.for a time of between about 1 hour and about 2 hours. In particularembodiments the curing process may be performed at a temperature ofabout 230° C. for about 1 hour, a temperature of about 220° C. for atime of about 1 hour, or at a temperature of about 200 ° C. for a timeof about 2 hours. However, any suitable temperature and time may beutilized.

By forming the second redistribution passivation layer 507 from amaterial such as the low temperature cured polyimide, a material with anincreased adhesion to the underlying layers (e.g., the firstredistribution passivation layer 501 and the first redistribution layer505) may be obtained. For example, by using the low temperature curedpolyimide for the second redistribution passivation layer 507, thesecond redistribution passivation layer 507 may have an adhesion to thefirst redistribution passivation layer 501 (e.g., PBO) of about 582kg/cm²). Additionally, the material of the second redistributionpassivation layer 507 will have an increased adhesion to the material ofthe first redistribution layer 505 of about 680 kg/cm² even without apost-exposure baking process. This increased adhesion to both thematerial of the first redistribution layer 505 and the secondredistribution passivation layer 507 leads to a reduction or even anelimination of delamination between the second redistributionpassivation layer 507 and the first redistribution passivation layer 501during subsequent processing and use.

Additionally, by using a material such as the low-temperature curedpolyimide for the second redistribution passivation layer 507,improvements in the openings formed within these structures may beachieved. For example, in openings formed within the secondredistribution passivation layer 507, the opening may have a via angleα₁ of between about 60° and about 70°, such as about 65° (compared toPBO's via angle of between about 35° and about 40°) and the cornerswithin openings formed within the low temperature cured polyimide aresharp with a via bottom footing of less than 0.5 μm, while the use of amaterial such as PBO will cause the openings to have undesirable cornerrounding and via bottom rounding.

After the second redistribution passivation layer 507 has beenpatterned, a second redistribution layer 509 may be formed to extendthrough the openings formed within the second redistribution passivationlayer 507 and make electrical connection with the first redistributionlayer 505. In an embodiment the second redistribution layer 509 may beformed using materials and processes similar to the first redistributionlayer 505. For example, a seed layer may be applied and covered by apatterned photoresist, a conductive material such as copper may beapplied onto the seed layer, the patterned photoresist may be removed,and the seed layer may be etched using the conductive material as amask. However, any suitable material or process of manufacture may beused.

After the second redistribution layer 509 has been formed, a thirdredistribution passivation layer 511 is applied over the secondredistribution layer 509 in order to help isolate and protect the secondredistribution layer 509. In an embodiment the third redistributionpassivation layer 511 may be formed of similar materials and in asimilar fashion as the second redistribution passivation layer 507. Forexample, the third redistribution passivation layer 511 may be formed ofa low-temperature cured polyimide that has been applied and patterned asdescribed above with respect to the second redistribution passivationlayer 507. However, any suitable material or process of manufacture maybe utilized.

After the third redistribution passivation layer 511 has been patterned,a third redistribution layer 513 may be formed to extend through theopenings formed within the third redistribution passivation layer 511and make electrical connection with the second redistribution layer 509.In an embodiment the third redistribution layer 513 may be formed usingmaterials and processes similar to the first redistribution layer 505.For example, a seed layer may be applied and covered by a patternedphotoresist, a conductive material such as copper may be applied ontothe seed layer, the patterned photoresist may be removed, and the seedlayer may be etched using the conductive material as a mask. However,any suitable material or process of manufacture may be used.

After the third redistribution layer 513 has been formed, a fourthredistribution passivation layer 515 may be formed over the thirdredistribution layer 513 in order to help isolate and protect the thirdredistribution layer 513. In an embodiment the fourth redistributionpassivation layer 515 may be formed of similar materials and in asimilar fashion as the second redistribution passivation layer 507. Forexample, the fourth redistribution passivation layer 515 may be formedof a low-temperature cured polyimide that has been applied and patternedas described above with respect to the second redistribution passivationlayer 507. However, any suitable material or process of manufacture maybe utilized.

By utilizing a hybrid structure that includes both a material such asPBO and a material such as low-temperature cured polyimide, the benefitsof each material may be obtained while minimizing the downside of thematerials. For example, in an embodiment the resolution that may beobtained with the PBO (with an AR of 1.5) and the low temperature curedpolyimide (with an AR of 1.1), the patterning of the structure mayachieve a critical dimension of less than 6 μm when the material such asthe PBO is formed such that there are no redistribution layers under thePBO. Additionally, by using the low temperature cured polyimide over thePBO, a larger adhesion between the low-temperature cured polyimide andthe underlying redistribution layers may be achieved, and the overallreliability of the structure may be improved in order to help thestructure pass quality tests, such as TCB-1050x, uHAST-192hrs, andHTS-1000hrs reliability tests. In particular, during some tests, such asthe uHAST test, the structure of PBO may decompose and lead toreliability issues while the structure of the low temperature curedpolyimide does not decompose. For example, FIG. 5C illustrates test datetaken after the uHAST test which illustrates that the structure of thelow temperature cured polyimide does not change after the reliabilitytests.

In particular, the low temperature cured polyimide as described hereinhas a adhesion with underlying layers (comprising, e.g., PBO and copper)of about 759 kg/cm² while PBO has an adhesion of about 643 kg/cm².Additionally, the low temperature cured polyimide has a low filmdeveloping film loss of about 1.5 μm (while PBO has a high film loss ofgreater than 4 μm, such as about 4.5 μm) and has a film shrinkage rate(after curing and after developing) of about 30% (compared to PBO's filmshrinkage rate of about 18%).

Returning to FIGS. 5A-5B, these figures further illustrate a formationof underbump metallizations 519 and third external connectors 517 tomake electrical contact with the third redistribution layer 513. In anembodiment the underbump metallizations 519 may each comprise threelayers of conductive materials, such as a layer of titanium, a layer ofcopper, and a layer of nickel. However, one of ordinary skill in the artwill recognize that there are many suitable arrangements of materialsand layers, such as an arrangement of chrome/chrome-copperalloy/copper/gold, an arrangement of titanium/titanium tungsten/copper,or an arrangement of copper/nickel/gold, that are suitable for theformation of the underbump metallizations 519. Any suitable materials orlayers of material that may be used for the underbump metallizations 519are fully intended to be included within the scope of the embodiments.

In an embodiment the underbump metallizations 519 are created by formingeach layer over the third redistribution layer 513 and along theinterior of the openings through the fourth redistribution passivationlayer 515. The forming of each layer may be performed using a platingprocess, such as electrochemical plating, although other processes offormation, such as sputtering, evaporation, or PECVD process, may beused depending upon the desired materials. The underbump metallizations519 may be formed to have a thickness of between about 0.7 μm and about10 μm, such as about 5 μm.

In an embodiment the third external connectors 517 may be placed on theunderbump metallizations 519 and may be a ball grid array (BGA) whichcomprises a eutectic material such as solder, although any suitablematerials may alternatively be used. In an embodiment in which the thirdexternal connectors 517 are solder balls, the third external connectors517 may be formed using a ball drop method, such as a direct ball dropprocess. Alternatively, the solder balls may be formed by initiallyforming a layer of tin through any suitable method such as evaporation,electroplating, printing, solder transfer, and then performing a reflowin order to shape the material into the desired bump shape. Once thethird external connectors 517 have been formed, a test may be performedto ensure that the structure is suitable for further processing.

Additionally, a surface device 521 may also be placed in contact withthe third redistribution layer 513 through the underbump metallizations519. The surface device 521 may be used to provide additionalfunctionality or programming to the first semiconductor device 201, thesecond semiconductor device 301, or the package as a whole. In anembodiment the surface device 521 may be a surface mount device (SMD) oran integrated passive device (IPD) that comprises passive devices suchas resistors, inductors, capacitors, jumpers, combinations of these, orthe like that are desired to be connected to and utilized in conjunctionwith the first semiconductor device 201 or the second semiconductordevice 301, or other parts of the package.

The surface device 521 may be connected to the underbump metallizations519, for example, by sequentially dipping connectors such as solderballs (not separately illustrated in FIGS. 5A-5B) of the surface device521 into flux, and then using a pick-and-place tool in order tophysically align the connectors of the surface device 521 withindividual ones of the underbump metallizations 519. In an embodiment inwhich the surface device 521 uses connectors such as solder balls, oncethe surface device 521 has been placed a reflow process may be performedin order to physically bond the surface device 521 with the underlyingunderbump metallizations 519 and a flux clean may be performed. However,any other suitable connector or connection process may be utilized, suchas metal-to-metal bonding or the like.

FIG. 6 illustrates a debonding of the first carrier substrate 101 fromthe first semiconductor device 201 and the second semiconductor device301. In an embodiment the third external connectors 517 and, hence, thestructure including the first semiconductor device 201 and the secondsemiconductor device 301, may be attached to a ring structure (notseparately illustrated in FIG. 6 ). The ring structure may be a metalring intended to provide support and stability for the structure duringand after the debonding process. In an embodiment the third externalconnectors 517, the first semiconductor device 201, and the secondsemiconductor device 301 are attached to the ring structure using, e.g.,an ultraviolet tape (also not illustrated in FIG. 6 ), although anyother suitable adhesive or attachment may alternatively be used.

Once the third external connectors 517 and, hence, the structureincluding the first semiconductor device 201 and the secondsemiconductor device 301 are attached to the ring structure, the firstcarrier substrate 101 may be debonded from the structure including thefirst semiconductor device 201 and the second semiconductor device 301using, e.g., a thermal process to alter the adhesive properties of theadhesive layer 103. In a particular embodiment an energy source such asan ultraviolet (UV) laser, a carbon dioxide (CO₂) laser, or an infrared(IR) laser, is utilized to irradiate and heat the adhesive layer 103until the adhesive layer 103 loses at least some of its adhesiveproperties. Once performed, the first carrier substrate 101 and theadhesive layer 103 may be physically separated and removed from thestructure comprising the third external connectors 517, the firstsemiconductor device 201, and the second semiconductor device 301.

However, while a ring structure may be used to support the thirdexternal connectors 517, such as description is merely one method thatmay be used and is not intended to be limiting upon the embodiments. Inanother embodiment the third external connectors 517 may be attached toa second carrier substrate using, e.g., a first glue. In an embodimentthe second carrier substrate is similar to the first carrier substrate101, although it may also be different. Once attached, the adhesivelayer 103 may be irradiated and the adhesive layer 103 and the firstcarrier substrate 101 may be physically removed.

FIG. 6 also illustrates a patterning of the polymer layer 105 in orderto expose the vias 111 (along with the associated first seed layer 107).In an embodiment the polymer layer 105 may be patterned using, e.g., alaser drilling method. In such a method a protective layer, such as alight-to-heat conversion (LTHC) layer or a hogomax layer (not separatelyillustrated in FIG. 6 ) is first deposited over the polymer layer 105.Once protected, a laser is directed towards those portions of thepolymer layer 105 which are desired to be removed in order to expose theunderlying vias 111. During the laser drilling process the drill energymay be in a range from 0.1 mJ to about 30 mJ, and a drill angle of about0 degree (perpendicular to the polymer layer 105) to about 85 degrees tonormal of the polymer layer 105. In an embodiment the patterning may beformed to form openings over the vias 111 to have a width of betweenabout 100 μm and about 300 μm, such as about 200 μm.

In another embodiment, the polymer layer 105 may be patterned byinitially applying a photoresist (not individually illustrated in FIG. 6) to the polymer layer 105 and then exposing the photoresist to apatterned energy source (e.g., a patterned light source) so as to inducea chemical reaction, thereby inducing a physical change in thoseportions of the photoresist exposed to the patterned light source. Adeveloper is then applied to the exposed photoresist to take advantageof the physical changes and selectively remove either the exposedportion of the photoresist or the unexposed portion of the photoresist,depending upon the desired pattern, and the underlying exposed portionof the polymer layer 105 are removed with, e.g., a dry etch process.However, any other suitable method for patterning the polymer layer 105may be utilized.

FIG. 7A illustrates a bonding of a first package 700. In an embodimentthe first package 700 may comprise a third substrate 701, a thirdsemiconductor device 703, a fourth semiconductor device 705 (bonded tothe third semiconductor device 703), third contact pads 707, a secondencapsulant 709, and fourth external connections 711. In an embodimentthe third substrate 701 may be, e.g., a packaging substrate comprisinginternal interconnects (e.g., through substrate vias 715) to connect thethird semiconductor device 703 and the fourth semiconductor device 705to the vias 111.

Alternatively, the third substrate 701 may be an interposer used as anintermediate substrate to connect the third semiconductor device 703 andthe fourth semiconductor device 705 to the vias 111. In this embodimentthe third substrate 701 may be, e.g., a silicon substrate, doped orundoped, or an active layer of a silicon-on-insulator (SOI) substrate.However, the third substrate 701 may also be a glass substrate, aceramic substrate, a polymer substrate, or any other substrate that mayprovide a suitable protection and/or interconnection functionality.These and any other suitable materials may be used for the thirdsubstrate 701.

The third semiconductor device 703 may be a semiconductor devicedesigned for an intended purpose such as being a logic die, a centralprocessing unit (CPU) die, a memory die (e.g., a DRAM die), combinationsof these, or the like. In an embodiment the third semiconductor device703 comprises integrated circuit devices, such as transistors,capacitors, inductors, resistors, first metallization layers (notshown), and the like, therein, as desired for a particularfunctionality. In an embodiment the third semiconductor device 703 isdesigned and manufactured to work in conjunction with or concurrentlywith the first semiconductor device 201.

The fourth semiconductor device 705 may be similar to the thirdsemiconductor device 703. For example, the fourth semiconductor device705 may be a semiconductor device designed for an intended purpose(e.g., a DRAM die) and comprising integrated circuit devices for adesired functionality. In an embodiment the fourth semiconductor device705 is designed to work in conjunction with or concurrently with thefirst semiconductor device 201 and/or the third semiconductor device703.

The fourth semiconductor device 705 may be bonded to the thirdsemiconductor device 703. In an embodiment the fourth semiconductordevice 705 is only physically bonded with the third semiconductor device703, such as by using an adhesive. In this embodiment the fourthsemiconductor device 705 and the third semiconductor device 703 may beelectrically connected to the third substrate 701 using, e.g., wirebonds, although any suitable electrical bonding may be alternatively beutilized.

Alternatively, the fourth semiconductor device 705 may be bonded to thethird semiconductor device 703 both physically and electrically. In thisembodiment the fourth semiconductor device 705 may comprise fourthexternal connections (not separately illustrated in FIG. 7A) thatconnect with fifth external connection (also not separately illustratedin FIG. 7A) on the third semiconductor device 703 in order tointerconnect the fourth semiconductor device 705 with the thirdsemiconductor device 703.

The third contact pads 707 may be formed on the third substrate 701 toform electrical connections between the third semiconductor device 703and, e.g., the fourth external connections 711. In an embodiment thethird contact pads 707 may be formed over and in electrical contact withelectrical routing (such as through substrate vias 715) within the thirdsubstrate 701. The third contact pads 707 may comprise aluminum, butother materials, such as copper, may alternatively be used. The thirdcontact pads 707 may be formed using a deposition process, such assputtering, to form a layer of material (not shown) and portions of thelayer of material may then be removed through a suitable process (suchas photolithographic masking and etching) to form the third contact pads707. However, any other suitable process may be utilized to form thethird contact pads 707. The third contact pads 707 may be formed to havea thickness of between about 0.5 μm and about 4 μm, such as about 1.45μm.

The second encapsulant 709 may be used to encapsulate and protect thethird semiconductor device 703, the fourth semiconductor device 705, andthe third substrate 701. In an embodiment the second encapsulant 709 maybe a molding compound and may be placed using a molding device (notillustrated in FIG. 7A). For example, the third substrate 701, the thirdsemiconductor device 703, and the fourth semiconductor device 705 may beplaced within a cavity of the molding device, and the cavity may behermetically sealed. The second encapsulant 709 may be placed within thecavity either before the cavity is hermetically sealed or else may beinjected into the cavity through an injection port. In an embodiment thesecond encapsulant 709 may be a molding compound resin such aspolyimide, PPS, PEEK, PES, a heat resistant crystal resin, combinationsof these, or the like.

Once the second encapsulant 709 has been placed into the cavity suchthat the second encapsulant 709 encapsulates the region around the thirdsubstrate 701, the third semiconductor device 703, and the fourthsemiconductor device 705, the second encapsulant 709 may be cured inorder to harden the second encapsulant 709 for optimum protection. Whilethe exact curing process is dependent at least in part on the particularmaterial chosen for the second encapsulant 709, in an embodiment inwhich molding compound is chosen as the second encapsulant 709, thecuring could occur through a process such as heating the secondencapsulant 709 to between about 100° C. and about 130° C., such asabout 125° C. for about 60 sec to about 3000 sec, such as about 600 sec.Additionally, initiators and/or catalysts may be included within thesecond encapsulant 709 to better control the curing process.

However, as one having ordinary skill in the art will recognize, thecuring process described above is merely an exemplary process and is notmeant to limit the current embodiments. Other curing processes, such asirradiation or even allowing the second encapsulant 709 to harden atambient temperature, may alternatively be used. Any suitable curingprocess may be used, and all such processes are fully intended to beincluded within the scope of the embodiments discussed herein.

In an embodiment the fourth external connections 711 may be formed toprovide an external connection between the third substrate 701 and,e.g., the vias 111. The fourth external connections 711 may be contactbumps such as microbumps or controlled collapse chip connection (C4)bumps and may comprise a material such as tin, or other suitablematerials, such as silver or copper. In an embodiment in which thefourth external connections 711 are tin solder bumps, the fourthexternal connections 711 may be formed by initially forming a layer oftin through any suitable method such as evaporation, electroplating,printing, solder transfer, ball placement, etc, to a thickness of, e.g.,about 100 μm. Once a layer of tin has been formed on the structure, areflow is performed in order to shape the material into the desired bumpshape.

Once the fourth external connections 711 have been formed, the fourthexternal connections 711 are aligned with and placed over the vias 111,and a bonding is performed. For example, in an embodiment in which thefourth external connections 711 are solder bumps, the bonding processmay comprise a reflow process whereby the temperature of the fourthexternal connections 711 is raised to a point where the fourth externalconnections 711 will liquefy and flow, thereby bonding the first package700 to the vias 111 once the fourth external connections 711resolidifies.

FIG. 7A also illustrates a debonding of the third external connectors517 from the ring structure and a singulation of the structure to form afirst integrated fan out package-on-package (InFO-POP) structure. In anembodiment the third external connectors 517 may be debonded from thering structure by initially bonding the first package 700 to a secondring structure using, e.g., a second ultraviolet tape. Once bonded, theultraviolet tape may be irradiated with ultraviolet radiation and, oncethe ultraviolet tape has lost its adhesiveness, the third externalconnectors 517 may be physically separated from the ring structure.

Once debonded, a singulation of the structure to form the first InFO-POPstructure is performed. In an embodiment the singulation may beperformed by using a laser or a saw blade (not shown) to slice throughthe encapsulant 401 and the polymer layer 105 between the vias 111,thereby separating one section from another to form the first InFO-POPstructure with the second semiconductor device 301. However, as one ofordinary skill in the art will recognize, utilizing a saw blade tosingulate the first InFO-POP structure is merely one illustrativeembodiment and is not intended to be limiting. Alternative methods forsingulating the first InFO-POP structure, such as utilizing one or moreetches to separate the first InFO-POP structure, may alternatively beutilized. These methods and any other suitable methods may alternativelybe utilized to singulate the first InFO-POP structure.

During the singulation process, even more advantages of usingembodiments described herein may be seen. By utilizing a material suchas the low temperature cured polyimide for the second redistributionpassivation layer 507, PBO residue that is usually seen aftersingulation within the scribe line structure when PBO is utilized issimply not present. Additionally, residue of the low temperature curedpolyimide structure is also not visible, and molding compound grains onthe scribe line are also not visible. With less visible residue, thereare fewer concerns or problems caused by such residue.

In another embodiment the first redistribution passivation layer 501,instead of being a material such as PBO as described above with respectto FIG. 5B, may instead be a material similar to the material of thesecond redistribution passivation layer 507. For example, in thisembodiment the first redistribution passivation layer 501 may be alow-temperature cured polyimide formed by application, exposure,development, and post-development baking as described above. However,any suitable material or method of manufacture may be utilized.

By forming the first redistribution passivation layer 501 to be similarto the second redistribution passivation layer 507, each of thepassivation layers over the encapsulant 401 on the front side of thepackage are formed using a material such as the low-temperaturepolyimide. By forming each of the passivation layers on the front sideof the package from the low-temperature polyimide, the increasedadhesion that is obtained (e.g., an adhesion of about 610 kg/cm2) byusing the low-temperature polyimide is increased and the risk ofdelamination is reduced. Additionally, the use of the low-temperaturepolyimide can achieve the 6 μm via openings without scums.

In yet another embodiment, not only is the first redistributionpassivation layer 501 made of a similar material as the secondredistribution passivation layer 507 (e.g., a low-temperature curedpolyimide), but the first passivation layer 211 is also formed from asimilar material as the second redistribution passivation layer 507. Forexample, in this embodiment the first passivation layer 211 (on thefirst semiconductor device 201) may be a low-temperature cured polyimideformed by application, exposure, development, post-development bakingand curing as described above. As such, a full low temperature curedpolyimide scheme is utilized within the process.

By forming both the first passivation layer 211 and the firstredistribution passivation layer 501 to be a similar material as therest of the front side passivation layers (e.g., the secondredistribution passivation layer 507, the third redistributionpassivation layer 511, and the fourth redistribution passivation layer515), the benefits of the material such as the low-temperature polyimide(e.g., its adhesion) may be extended. Additionally, in embodiments inwhich the die is a DRAM die, the low-temperature polyimide allows forthe removal of PBO's high temperature processes (320° C. for 1.5 hoursto cure the high temperature PBO) that can cause upwards of a 2.5% yieldloss.

In yet another embodiment, in addition to the first passivation layer211 and the first redistribution passivation layer 501 being a similarmaterial as the second redistribution passivation layer 507, the polymerlayer 105 as well is formed from a similar material as the secondredistribution passivation layer 507. In this embodiment the polymerlayer 105, instead of being a material such as PBO as described above,is instead a material such as the low-temperature polyimide. Forexample, in this embodiment the polymer layer 105 may be alow-temperature cured polyimide formed by application, exposure,development, and post-development baking as described above. However,any suitable material or method of manufacture may be utilized.

By forming all of the first passivation layer 211, the firstredistribution passivation layer 501, and the polymer layer 105 to be asimilar material as the rest of the front side passivation layers (e.g.,the second redistribution passivation layer 507, the thirdredistribution passivation layer 511, and the fourth redistributionpassivation layer 515), the benefits of the material (e.g., itsadhesion) may be achieved on both sides of the encapsulant 401. As such,with the increased adhesion, a reduction in the possibility ofdelamination may be reduced or even eliminated.

FIG. 7B illustrates a chart of the increase in adhesion that may beobtained by using the low temperature cured polyimide (represented inFIG. 7B by the term “LT-PI) for the first redistribution layer 505(e.g., “PM1”) and for the second redistribution passivation layer 507(e.g., “PM2”). As can be seen, in an embodiment with a low temperaturepost-development bake (“PDB”), the adhesion may be as high as 759Kg/cm², which is greater than the control of PBO which has an adhesionof 643 Kg/cm². Further, even without a post-development bake, the lowtemperature cured polyimide will still show an improvement over thecontrol of 680 Kg/cm².

FIGS. 8A-8B illustrate another embodiment in which the previousembodiments (including all of the embodiments with differing and similarmaterials as described above with respect to FIGS. 1-7B) are utilizedalong with a process to form an open scribe line, with FIG. 8Billustrating a close-up view of the dashed box labeled 801 in FIG. 8A.In this embodiment the redistribution structure 500 may be divided intoa scribe region 804, a seal ring region 803, a buffer region 805, and anactive circuitry region 807. The scribe region 804 will be the regionwhere the singulation will take place, while the seal ring region 803contains a seal ring 806 that will be used to help isolate the interiorstructure. Additionally, the buffer region 805 allows for a distancebetween the seal ring region 803 and the active circuitry of the rest ofthe redistribution structure that may be found in the active circuitryregion 807.

In a particular configuration the seal ring region 803 may have a sealring width W_(sr) of between about 10 μm and about 200 μm, such as about60 μm and which has the step back of each passivation layer located on afirst side of the seal ring 806. The scribe region 804 may have a stepback width W_(sb) of between about 5 μm and about 100 μm, such as about30 μm. Additionally, a buffer region 805, which may be used to provide abuffer between the seal ring 806 and the remainder of the redistributionlayers, may have a buffer region width W_(b) of between about 5 μm andabout 100 μm, such as about 20 μm. However, any suitable dimensions maybe utilized.

In this embodiment, the first redistribution passivation layer 501, thesecond redistribution passivation layer 507, the third redistributionpassivation layer 511, and the fourth redistribution passivation layer515 within the scribe region 804 are formed (e.g., during theapplication, exposure, developing, and low temperature curing) so thateach passivation layer within the scribe region 804 is stepped back fromthe passivation layer beneath it. Looking at FIG. 8B, it can be seenthat in this embodiment the first redistribution passivation layer 501does not cover the length of the encapsulant 401 and the secondredistribution passivation layer 507 does not cover the length of thefirst redistribution passivation layer 501. Additionally, the thirdredistribution passivation layer 511 is formed so as to cover only aportion and not the length of the second redistribution passivationlayer 507, and the fourth redistribution passivation layer 515 is formedso as to cover only a portion and not the length of the thirdredistribution passivation layer 511.

FIG. 8B illustrates a close up view of the result of this pullback ofthe successively higher passivation layers. In an embodiment the firstredistribution passivation layer 501 may be pulled back from the desiredcut point (e.g., during singulation) and have a first edge that islocated a first distance D₁ of between about 1 μm and about 50 μm, suchas about 8 μm, away from the cut point. Similarly, an edge of the secondredistribution passivation layer 507 may be pulled back from the edge ofthe first redistribution passivation layer 501 a second distance D₂ ofbetween about 1 μm and about 50 μm, such as about 8 μm, and an edge ofthe third redistribution passivation layer 511 may be pulled back fromthe edge of the second redistribution passivation layer 507 a thirddistance D₃ of between about 1 μm and about 50 μm, such as about 8 μm.Finally, an edge of the fourth redistribution passivation layer 515 maybe pulled back from the third redistribution passivation layer 511 afourth distance D₄ of between about 1 μm and about 50 μm, such as about8 μm.

However, while the above described structure has been described withspecific dimensions, one of ordinary skill in the art will recognizethat these descriptions are intended to be illustrative only and are notintended to be limiting upon the embodiments. Rather, any suitabledimensions may be utilized, and all such dimensions are fully intendedto be included within the scope of the embodiments.

Additionally, in an embodiment the metallization within the firstredistribution layer 505, the second redistribution layer 509, and thethird redistribution layer 513 that are located within the seal ringregion 803 are formed so as to be the seal ring 806 in a stagger viaopening configuration. In an embodiment the seal ring 806 may be formedby forming portions of the first redistribution layer 505, the secondredistribution layer 509 and the third redistribution layer 513 that arelocated within the seal ring region 803 to have dimensions appropriatefor the seal ring 806. Looking first at the first redistribution vias503 within the seal ring 806, each of the first redistribution vias 503within the seal ring 806 may be formed so as to have a first width W₁ ofbetween about 1 μm and about 50 μm, such as about 9 μm, and the firstredistribution vias 503 may be separated by a fifth distance D₅ ofbetween about 5 μm and about 50 μm, such as about 25 μm.

The first redistribution layer 505 within the seal ring 806 may beformed over the first redistribution vias 503 to a thickness over thefirst redistribution passivation layer 501 of between about 3 μm andabout 10 μm, such as about 6 μm, and may be formed to extend past thevias 503 (towards the pulled back edge of the second redistributionpassivation layer 507) a sixth distance D₆ of between about 1 μm andabout 20 μm, such as about 6 μm, and may also be formed to extend pastthe first redistribution vias 503 (towards the active circuitry region807 of the first redistribution layer 505) a seventh distance D₇ ofbetween about 1 μm and about 20 μm, such as about 7 μm. The firstredistribution layer 505 within the seal ring 806 may be separated fromthe buffer region 805 by a twelfth distance D₁₂ of between about 1 μmand about 20 μm, such as about 4 μm.

The second redistribution layer 509 may be formed over and in contactwith the first redistribution layer 505 to a thickness over the secondredistribution passivation layer 507 of between about 3 μm and about 10μm, such as about 4 μm. In an embodiment the second redistribution layer509 will be formed to extend through the second redistributionpassivation layer 507 so that a section of the second redistributionlayer 509 that extends has a second width W₂ of between about 1 μm andabout 50 μm, such as about 14 μm, and is offset from one of the firstredistribution vias 503 a first offset distance D_(o1) of between about1 μm and about 50 μm, such as about 3 μm, and is offset from another ofthe first redistribution vias 503 a second offset distance D_(o2) ofbetween about 1 μm and about 50 μm, such as about 8 μm. Additionally,the second redistribution layer 509 may be formed to extend towards thepulled back edge of the third redistribution passivation layer 511 aneighth distance D₈ of between about 5 μm and about 50 μm, such as about20 μm, and extends towards the active circuitry region 807 of the secondredistribution layer 509 a ninth distance D₉ of between about 5 μm andabout 100 μm, such as about 29 μm. The second redistribution layer 509may be separated from the scribe region 804 a thirteenth distance D₁₃ ofbetween about 1 μm and about 50 μm, such as about 11 μm.

The third redistribution layer 513 may be formed over and in contactwith the second redistribution layer 509 to a thickness over the thirdredistribution passivation layer 511 of between about 3 μm and about 15μm, such as about 5 μm. In an embodiment the third redistribution layer513 will be formed to extend through the third redistributionpassivation layer 511 so that a section of the third redistributionlayer 513 that extends has the second width W₂, and is offset from thefirst extension (of the second redistribution layer 509) by a thirdoffset distance D_(o3) of between about 1 μm and about 50 μm, such asabout 3 μm, and is offset from an edge of the second redistributionlayer 509 by a fourth offset distance D_(o4) of between about 5 μm andabout 50 μm, such as about 11 μm. Finally, the third redistributionlayer 513 may be formed so that it extends towards the pulled back edgeof the fourth redistribution passivation layer 515 a tenth distance D₁₀of between about 1 μm and about 50 μm, such as about 10 μm, and extendstowards the active circuitry region 807 of the fourth redistributionpassivation layer 515 an eleventh distance D₁₁ of between about 1 μm andabout 50 μm, such as about 7 μm.

Once the redistribution structure 500 has been formed with the step backstructure within the scribe region 804, additional manufacturingprocesses may be performed. For example, the first carrier substrate 101may be debonded, the polymer layer 105 may be patterned, the firstpackage 700 may be bonded to the vias 111, and the structure may besingulated using, e.g., a laser singulation process, as described abovewith respect to FIGS. 1-7B.

However, by utilizing the open scribe line approach as described herein,the removal of the passivation layers from the scribe line regions savesmoney during the singulation process. For example, in an embodiment inwhich a laser is utilized to perform the singulation, by removingmaterial in the scribe region 804 prior to the singulation process,there is already less material that needs to be removed. As such, withless material to remove, less power is needed during the actualsingulation process to remove the material that remains in place. Assuch, the increased adhesion that is available with a material such asthe low temperature cured polyimide material allows for such a step backand is more feasible to be used with the scribe line open approach.

Additionally, while not explicitly described herein, the dimensions usedto form the seal ring 806 may also be used in the embodiments describedabove with respect to FIGS. 1-7 . For example, the dimensions used toform the seal ring 806 may be used within the structures that do nothave the step back of the passivation layers.

By utilizing the hybrid and full low temperature cured polyimidestructures as described herein, the adhesion of the passivation layerscan be improved. Such adhesion can improve the delamination free rate ofthese structures from about 86% to about 100%, effectively mitigating oreven eliminating problems associated with delamination within thesestructures.

FIG. 9 illustrates another embodiment in which the material of thesecond redistribution passivation layer 507, instead of being cured toform a low temperature cured polyimide (as described above with respectto FIGS. 1-8B), is cured to form an ultra-low temperature curedpolyimide. In this embodiment, and as FIG. 9 illustrates with the x-axisunits being in minutes, the second redistribution passivation layer 507may be cured using a first curing process 901 which has a first rampingstage 903, a first curing stage 905, and a first cooling stage 907. Inan embodiment the first curing process 901 is performed with a radiationcuring process, wherein the second redistribution passivation layer 507is irradiated with energy in order to increase the temperature of thesecond redistribution passivation layer 507. However, any suitableheating process may be utilized.

In an embodiment the first curing process 901 may be initiated byraising the temperature of the second redistribution passivation layer507 from room temperature to a temperature of between about 150° C. andless than or equal to about 200° C., such as about 190° C. in the firstramping stage 903. In an embodiment the first ramping stage 903 mayincrease the temperature of the second redistribution passivation layer507 at a rate of between about 2° C./min and about 5° C., such as about4.8° C., and can bypass the need for a low temperature step to warm upthe machine. However, any suitable rate of temperature change may beutilized.

Once the first ramping stage 903 has increased the temperature to thedesired curing temperature (e.g., 190° C.), the temperature of thesecond redistribution passivation layer 507 may be held steady for thefirst curing stage 905. In an embodiment the first curing stage 905 maybe between about 1 hour and about 10 hours, such as about 2 hours.However, any suitable time may be utilized.

After the first curing stage 905 has been completed, the first coolingstage 907 may be used to lower the temperature of the secondredistribution passivation layer 507 for further processing. In anembodiment the first cooling stage 907 may reduce the temperature of thesecond redistribution passivation layer 507 at a rate of between about0.5° C./min and about 2.0° C./min, such as about 1.0° C./min or about0.8° C./min. However, any suitable rate of cooling may be utilized.

During each of the first ramping stage 903, the first curing stage 905,and the first cooling stage 907, a non-reactive gas such as nitrogen maybe flowed through the chamber at a flow rate of between about 10000 sccmand about 90000 sccm, such as about 60000 sccm. Additionally, an oxygencontent of the atmosphere may be kept to below about 5 ppm. The pressureof the chamber may also be kept at a pressure of between about 30 torrand about 700 torr, such as at about 69 torr. However, any suitableprocess conditions may be utilized.

FIG. 9 also illustrates another embodiment in which the secondredistribution passivation layer 507 is cured using a second curingprocess 909. In this embodiment, the first ramping stage 903 may beperformed as described above with respect to the first curing process901 (e.g. ramping at a rate of about 1.0° C./min). However, in thisembodiment the first ramping stage 903 continues to increase thetemperature of the second redistribution passivation layer 507 until thetemperature of the second redistribution passivation layer 507 hasincreased to about 200° C. The temperature of the second redistributionpassivation layer 507 is held at 200° C. for between about 1 hour andabout 10 hours, such as about 2 hours, and then the first cooling stage907 may be used to reduce the temperature of the second redistributionpassivation layer 507 for further processing.

FIG. 10 illustrates another embodiment in which a spike stage 1001 isused in addition to the first ramping stage 903, the first curing stage905, and the first cooling stage 907. In one embodiment, a third curingprocess 1002 is illustrated in which, at the end of the first curingstage 905 with a temperature of 190° C., the temperature of the secondredistribution passivation layer 507 is increased to a temperature ofbetween about 200° C. and about 260° C., such as about 230° C. In anembodiment the temperature in the spike stage 1001 may be increased at arate of between about 1.8° C./min and about 10° C./min, such as about 2°C./min. Once the temperature has increased to the maximum temperature,the first cooling stage 907 may be utilized to reduce the temperature ofthe second redistribution passivation layer 507 for further processingas described above with respect to FIG. 9 .

FIG. 10 also illustrates a fourth curing process 1003 which also usesthe spike stage 1001, and in which the x-axis has units of minutes. Inthis embodiment, however, instead of the first curing stage 905 holdinga temperature of 190° C., the first curing stage 905 holds a temperatureof about 200° C. Then, once the first curing stage 905 has beencompleted, the spike stage 1001 may be used to increase the temperatureof the second redistribution passivation layer 507 to a temperature ofbetween about 200° C. and about 260° C., such as about 230° C., and thenthe first cooling stage 907 may be used to reduce the temperature of thesecond redistribution passivation layer 507 for further processing.

FIG. 11 illustrates additional test data taken which illustrates thepolyimide cyclization using a 1378 cm⁻¹/1501 cm⁻¹ Fourier transforminfrared spectroscopy (FTIR) ratio. In particular, the ultra-lowtemperature cured polyimide as described herein (represented in FIG. 11by the rows labeled “200C-2H,” “190C-2H,” “200C-2H+230C-5min,” and“190C-2H+230C-5min”) has an polyimide cyclization of less than 1.60,whereas other polyimides (such as the non ultra-low temperaturepolyimide labeled in FIG. 11 as “230C-1H”) have a polyimide cyclizationof greater than 1.6, such as 1.63. As such, the ultra-low temperaturecured polyimide may provide additional structural benefits for thesecond redistribution passivation layer 507.

For example, if the second redistribution passivation layer 507 isformed as a low-temperature polyimide material (instead of an ultra-lowtemperature polyimide material), such as by being cured at a temperatureof 230° C. for one hour, the second redistribution passivation layer 507may be formed with an initial thickness of 11.91 μm, but have athickness after curing of only 8.38 μm, which has a 70% shrinkage andwarps by 63 μm. Additionally, outgassing at a temperature of 130° C. forfive minutes has a pressure of 4.67×10⁻⁸ torr, and the film has anelongation of 87.2%/1.56%, a tensile strength of 198/4.09 MPa, and acyclization of 100%. Finally, the film has an adhesion using a stud pullof a coarse copper of >600 kg/cm² at an epoxy interface, an adhesion of643.6/42.8 kg/cm² when an MR10X+TCC200 test is used, and an adhesion of629.6/49.8 kg/cm² when an MR3X+μHAST96 adhesion test is utilized.

However, if the second redistribution passivation layer 507 is formed asan ultra-low temperature polyimide material, such as by being cured at atemperature of 190° C. for two hours, the second redistributionpassivation layer 507 may be formed with an initial thickness of 11.96μm, but have a thickness after curing of only 8.48 μm, which has a 71%shrinkage and warps by 67 μm. Additionally, outgassing at a temperatureof 130° C. for five minutes has a pressure of 5.04×10⁻⁸ torr, and thefilm has an elongation of 52.2%/4.39%, a tensile strength of 131/3.4MPa, and a cyclization of 85%. Finally, the film has an adhesion oncoarse copper surfaces using stud pull tests of >600 kg/cm² at an epoxyinterface, an adhesion of 619.3/91.2 kg/cm² when an MR10X+TCC200 test isused, and an adhesion of 535.4/28.9 kg/cm² when an MR3X+μHAST96 adhesiontest is utilized. Finally, the second redistribution passivation layer507 has a real wafer of WLFT (wafer level final test) yield of 92.5%.

Additionally, if the second redistribution passivation layer 507 isformed as an ultra-low temperature polyimide material of anotherembodiment, such as by being cured at a temperature of 200° C. for twohours, the second redistribution passivation layer 507 may be formedwith an initial thickness of 11.96 μm, but have a thickness after curingof only 8.46 μm, which has a 71% shrinkage and warps by 60 μm.Additionally, outgassing at a temperature of 130° C. for five minuteshas a pressure of 5.65×10⁻⁸ torr, and the film has an elongation of71.6%/1.12%, a tensile strength of 149/4.19 MPa, and a cyclization of98%. Finally, the film has an adhesion on coarse copper surfaces usingstud pull tests >600 kg/cm² at an epoxy interface, an adhesion of580.8/43.2 kg/cm² when an MR10X+TCC200 test is used, and an adhesion of487.4/65.6 kg/cm² when an MR3X+μHAST96 adhesion test is utilized.Finally, the second redistribution passivation layer 507 has a realwafer of WLFT (wafer level final test) yield of 95.4%.

By forming the second redistribution passivation layer 507 as anultra-low temperature cured polyimide material, a thermal budget for theoverall manufacture may be greatly reduced. Additionally, in embodimentsin which the first semiconductor device 201 is a DRAM device, which maybe very susceptible to damage from heating, the DRAM/memory failure ratemay be reduced from 4% (in an embodiment using a DRAM device with a highthermal budget) to as low as 0%, which may lead to a wafer per hourimprovement from 10 to 16 for additional cost reductions.

Additionally, the ultra-low temperature cured polyimide material may besubstituted for any of the low-temperature cured polyimide materials asdescribed above with respect to FIGS. 1-8B. For example, the ultra-lowtemperature cured polyimide material may be used for the firstredistribution passivation layer 501, for the third redistributionpassivation layer 511, for the fourth redistribution passivation layer515, or for the polymer layer 105 in any of the combinations asdescribed above with respect to FIGS. 1-8B. Any suitable combination maybe utilized.

FIG. 12 illustrates that, when the ultra-low temperature cured polyimidematerial is used for the first redistribution passivation layer 501, forthe third redistribution passivation layer 511, and for the fourthredistribution passivation layer 515, the structure of the openingsformed through the first redistribution passivation layer 501, the thirdredistribution passivation layer 511, and the fourth redistributionpassivation layer 515 is improved. For example, when the ultra-lowtemperature cured polyimide material is used for the firstredistribution passivation layer 501, for the third redistributionpassivation layer 511, and for the fourth redistribution passivationlayer 515, the openings through these layers may be formed to have a topcorner via opening α_(TCV) of between about 2° and about 8° (as opposedto 10°-15° for a low temperature cured polyimide material. Additionally,the opening may have a lower corner angle α_(LC) of between about 45°and about 55°.

Finally, by using the low temperature cured polyimide material for thematerials of the first redistribution passivation layer 501, the secondredistribution passivation layer 507, the third redistributionpassivation layer 511, and the fourth redistribution passivation layer515, and/or the polymer layer 105, the degree of planarization (DoP) foreach layer may be improved. In particular, the DoP is determined by thefollowing equation, where t is the thickness of the underlying layersand ts is the height of a bump or imperfection in the redistributionpassivation layer caused by the underlying layers:

${DoP} = {\left( {1 - \frac{ts}{t}} \right) \times 100{\%.}}$

Experimental data indicates that the DoP is improved from 48.6% (1-138μm/3.5 μm for a low temperature cured polyimide material) to 68.6%(1-1.1 μm/3.5 μm for an ultra-low temperature cured polyimide material).In other words, the surface of the passivation layers is significantlyflatter using an ultra-low temperature cured polyimide material.

In accordance with an embodiment, a method of manufacturing asemiconductor device, the method comprising placing a firstsemiconductor die adjacent to a via and encapsulating the firstsemiconductor die and the via with an encapsulant is provided. A firstdielectric layer is formed over the first semiconductor die and the via,and a first redistribution layer is formed over the first dielectriclayer. A second dielectric layer is deposited over the firstredistribution layer, wherein the second dielectric layer comprises afirst material, the first material being a low-temperature curedpolyimide.

In accordance with another embodiment, a method of manufacturing asemiconductor device, the method comprising applying a first dielectricmaterial over a via, a first semiconductor device, and an encapsulant,wherein the via is laterally separated from the first semiconductordevice by the encapsulant is provided. A first application of apolyimide is performed, wherein the performing the first applicationfurther comprises a first set of steps, the first set of steps comprisesapplying a second dielectric material over the first dielectricmaterial, wherein the second dielectric material comprises a polyimideresin, photoactive compounds, and a solvent; exposing the seconddielectric material to a patterned light source; developing the seconddielectric material after the exposing the second dielectric material;and curing the second dielectric material after the developing thesecond dielectric material, wherein the curing the second dielectricmaterial is performed at a temperature of less than 230° C.

In accordance with yet another embodiment, a semiconductor devicecomprising an encapsulant extending between a first semiconductor dieand a via, wherein the encapsulant, the first semiconductor die and thevia are planar with each other is provided. A first dielectric islocated over the encapsulant. A first redistribution layer is locatedover the first dielectric, the first redistribution layer comprising afirst material. A second dielectric is located over the firstredistribution layer, wherein the second dielectric has an adhesion tothe first material of greater than about 680 kg/cm².

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device comprising: a conductivematerial on a first seed layer forming a via; an encapsulantencapsulating a first semiconductor die and the via, wherein the via hasa first surface that is planar with both the encapsulant and the firstsemiconductor die and has a second surface opposite the first surface,the second surface being planar with the encapsulant and the firstsemiconductor die, the first surface being part of the first seed layer;a first dielectric layer over the encapsulant; a first redistributionlayer over and extending through the first dielectric layer, the firstredistribution layer comprising a second seed layer directly adjacent tothe second surface; and a low-temperature cured polyimide over the firstredistribution layer; a second redistribution layer over thelow-temperature cured polyimide, the second redistribution layercomprising a second material; a second dielectric layer located over thesecond redistribution layer, wherein the second dielectric layer has anadhesion to the second material of greater than about 680 kg/cm²; athird redistribution layer over the second dielectric layer, the thirdredistribution layer comprising a third material; and a third dielectriclayer located over the second redistribution layer, wherein the thirddielectric layer has an adhesion to the third material of greater thanabout 680 kg/cm².
 2. The method of claim 1, wherein the first dielectriclayer comprises polybenzoxazole.
 3. The method of claim 1, wherein thelow-temperature cured polyimide has an adhesion to the first dielectriclayer of about 582 kg/cm².
 4. The method of claim 1, wherein at leastpart of the first redistribution layer extends into a seal ring region.5. The method of claim 4, wherein the seal ring region has a first widthof between about 10 μm and about 200 μm.
 6. The method of claim 5,wherein the seal ring region is adjacent to a scribe region.
 7. Asemiconductor device comprising: a first polyimide over a firstdielectric material, the first dielectric material being located over avia, a first semiconductor device, and an encapsulant; and a secondpolyimide over the first polyimide, wherein the second polyimide has anexterior sidewall that has a lateral offset from an exterior sidewall ofthe first polyimide of at least 8 μm, the second polyimide has anadhesion to the first redistribution layer of greater than about 680kg/cm², wherein the first dielectric material is between the encapsulantand the first polyimide, and wherein at least a portion of the secondpolyimide comprises a monomer with the following formula:


8. The method of claim 7, wherein the first dielectric material ispolybenzoxazole.
 9. The method of claim 7, the first polyimide may havean adhesion to the first dielectric material of about 582 kg/cm². 10.The method of claim 7, wherein the first dielectric material extendsover a buffer region, a seal ring region, and a scribe region.
 11. Themethod of claim 10, wherein the buffer region has a width of betweenabout 5 μm and about 100 μm.
 12. The method of claim 11, wherein theseal ring region has a width of between about 10 μm and about 60 μm. 13.The method of claim 12, wherein the scribe region has a second width ofbetween about 5 μm and about 30 μm.
 14. The method of claim 7, whereinthe first polyimide and each other dielectric layer over the encapsulantwithin the scribe region are stepped back from the layer beneath it. 15.A semiconductor device comprising: a conductive material on a first seedlayer forming a via; an encapsulant encapsulating a first semiconductordie and the via, wherein the via has a first surface that is planar withboth the encapsulant and the first semiconductor die and has a secondsurface opposite the first surface, the second surface being planar withthe encapsulant and the first semiconductor die, the first surface beingpart of the first seed layer; a first dielectric layer over theencapsulant; a first redistribution layer over and extending through thefirst dielectric layer, the first redistribution layer comprising asecond seed layer directly adjacent to the second surface; and alow-temperature cured polyimide over the first redistribution layer,wherein the low-temperature cured polyimide has an adhesion to the firstdielectric layer of about 582 kg/cm².
 16. The method of claim 15,wherein the first dielectric layer comprises polybenzoxazole.
 17. Themethod of claim 15, wherein the first dielectric layer 501 extends overa buffer region, a seal ring region, and a scribe region.
 18. The methodof claim 17, wherein the buffer region has a first width of betweenabout 5 μm and about 100 μm.
 19. The method of claim 18, wherein theseal ring region has a second width of between about 10 μm and about 60μm.
 20. The method of claim 19, wherein the scribe region has a thirdwidth of between about 5 μm and about 100 μm.